sot223 n-channel enhancement mode vertical dmos fet issue 3 - january 1996 j features * compact geometry * fast switching speeds * no secondary breakdown and excellent temperature stability * high input impedance and low current drive * ease of parralleling applications * dc-dc converters * solenoid / relay drivers for automotive applications * stepper motor drivers and print head drivers partmarking detail - zvn4206 absolute maximum ratings. parameter symbol value unit drain-source voltage v ds 60 v continuous drain current at t amb =25c i d 1a pulsed drain current i dm 8a gate-source voltage v gs 20 v power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c ZVN4206G ZVN4206G electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss 60 v i d =1ma, v gs =0v gate-source threshold voltage v gs(th) 1.3 3 v i d =1ma, v ds = v gs gate-body leakage i gss 100 na v gs = 20v, v ds =0v zero gate voltage drain current i dss 10 100 m a m a v ds =60v, v gs =0v v ds =48v, v gs =0v, t=125c (2) on-state drain current (1) i d(on) 3av ds =25v, v gs =10v static drain-source on-state resistance (1) r ds(on) 1 1.5 w w v gs =10v, i d =1.5a v gs =5v, i d =0.5a forward transconductance (1)(2) g fs 300 ms v ds =25v,i d =1.5a input capacitance (2) c iss 100 pf common source output capacitance (2) c oss 60 pf v ds =25v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 20 pf turn-on delay time (2)(3) t d(on) 8ns v dd ? 25v, i d =1.5a, v gen =10v rise time (2)(3) t r 12 ns turn-off delay time (2)(3) t d(off) 12 ns fall time (2)(3) t f 15 ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. (3) switching times measured with 50 w source impedance and <5ns rise time on a pulse generator d d s g 3 - 402 3 - 401
sot223 n-channel enhancement mode vertical dmos fet issue 3 - january 1996 j features * compact geometry * fast switching speeds * no secondary breakdown and excellent temperature stability * high input impedance and low current drive * ease of parralleling applications * dc-dc converters * solenoid / relay drivers for automotive applications * stepper motor drivers and print head drivers partmarking detail - zvn4206 absolute maximum ratings. parameter symbol value unit drain-source voltage v ds 60 v continuous drain current at t amb =25c i d 1a pulsed drain current i dm 8a gate-source voltage v gs 20 v power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c ZVN4206G ZVN4206G electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss 60 v i d =1ma, v gs =0v gate-source threshold voltage v gs(th) 1.3 3 v i d =1ma, v ds = v gs gate-body leakage i gss 100 na v gs = 20v, v ds =0v zero gate voltage drain current i dss 10 100 m a m a v ds =60v, v gs =0v v ds =48v, v gs =0v, t=125c (2) on-state drain current (1) i d(on) 3av ds =25v, v gs =10v static drain-source on-state resistance (1) r ds(on) 1 1.5 w w v gs =10v, i d =1.5a v gs =5v, i d =0.5a forward transconductance (1)(2) g fs 300 ms v ds =25v,i d =1.5a input capacitance (2) c iss 100 pf common source output capacitance (2) c oss 60 pf v ds =25v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 20 pf turn-on delay time (2)(3) t d(on) 8ns v dd ? 25v, i d =1.5a, v gen =10v rise time (2)(3) t r 12 ns turn-off delay time (2)(3) t d(off) 12 ns fall time (2)(3) t f 15 ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. (3) switching times measured with 50 w source impedance and <5ns rise time on a pulse generator d d s g 3 - 402 3 - 401
3 - 403 3 - 404 typical characteristics output characteristics v ds - drain source voltage (volts) transfer characteristics 246810 010 20304050 saturation characteristics v ds- drain source voltage (volts) voltage saturation characteristics v gs- gate source voltage (volts) v gs- gate source voltage (volts) v ds - drain source voltage (volts) 02 46810 6 4 0 2 i d - d r a i n c u r r e nt (amps) v ds= 10v 0 10 6 2 4 8 02 4 6 8 10 i d= 3a 1.5a 0.5a i d - d r a i n c urr e nt (amps) i d - drain curre n t ( amps) on-resistance v drain current i d- drain current (amps) r ds(on) -drain source on resistance ( w ) 0.1 1.0 10 4.5v 6v v gs =3.5v 8v 10v 0.1 10 1.0 normalised r ds(on) and v gs(th) v temperature t j -junction temperature (c) normalised r d s ( o n) a nd v g s (th) -50 -25 0 25 50 75 100 150 125 175 200 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 drai n -s o u rc e r es i s tan c e r d s( o n ) g ate t h res h o l d v o lt ag e v gs ( th ) i d= 1.5a v gs= 10v i d= 1ma v gs= v ds 2.6 225 0 4 2 6 10 8 10v 8v 9v 7v 5v 4v 6v 4.5v 3.5v v gs= 20v 12v 14v 16v 5v 4v 10v 8v 6v 9v 7v 4.5v 3.5v v gs= 20v 12v 14v 16v 0 4 2 6 10 8 20v 14v typical characteristics transconductance v drain current i d - drain current (amps ) g fs - t ra n sc o ndu c t a nce (ms) g f s -t rans c o n ducta n ce ( m s) v ds -drain source voltage (volts) capacitance v drain-source voltage c- cap a c ita nce (pf) q-charge (nc) transconductance v gate-source voltage v gs -gate source voltage (volts) v g s -g a te so urce v oltage (v olts) gate charge v gate-source voltage 0 10 8 6 2 0 4 12 14 16 v ds = 20v i d= 1.5a 40v 60v 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 12345678910 v ds= 10v 0 300 200 100 400 800 700 600 500 900 1000 0 12345678910 v ds= 10v 0 300 200 100 400 800 700 600 500 900 1000 c oss c iss c rss 010 20 304050 60 70 80 0 120 80 40 160 200 ZVN4206G ZVN4206G
3 - 403 3 - 404 typical characteristics output characteristics v ds - drain source voltage (volts) transfer characteristics 246810 010 20304050 saturation characteristics v ds- drain source voltage (volts) voltage saturation characteristics v gs- gate source voltage (volts) v gs- gate source voltage (volts) v ds - drain source voltage (volts) 02 46810 6 4 0 2 i d - d r a i n c u r r e nt (amps) v ds= 10v 0 10 6 2 4 8 02 4 6 8 10 i d= 3a 1.5a 0.5a i d - d r a i n c urr e nt (amps) i d - drain curre n t ( amps) on-resistance v drain current i d- drain current (amps) r ds(on) -drain source on resistance ( w ) 0.1 1.0 10 4.5v 6v v gs =3.5v 8v 10v 0.1 10 1.0 normalised r ds(on) and v gs(th) v temperature t j -junction temperature (c) normalised r d s ( o n) a nd v g s (th) -50 -25 0 25 50 75 100 150 125 175 200 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 drai n -s o u rc e r es i s tan c e r d s( o n ) g ate t h res h o l d v o lt ag e v gs ( th ) i d= 1.5a v gs= 10v i d= 1ma v gs= v ds 2.6 225 0 4 2 6 10 8 10v 8v 9v 7v 5v 4v 6v 4.5v 3.5v v gs= 20v 12v 14v 16v 5v 4v 10v 8v 6v 9v 7v 4.5v 3.5v v gs= 20v 12v 14v 16v 0 4 2 6 10 8 20v 14v typical characteristics transconductance v drain current i d - drain current (amps ) g fs - t ra n sc o ndu c t a nce (ms) g f s -t rans c o n ducta n ce ( m s) v ds -drain source voltage (volts) capacitance v drain-source voltage c- cap a c ita nce (pf) q-charge (nc) transconductance v gate-source voltage v gs -gate source voltage (volts) v g s -g a te so urce v oltage (v olts) gate charge v gate-source voltage 0 10 8 6 2 0 4 12 14 16 v ds = 20v i d= 1.5a 40v 60v 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 12345678910 v ds= 10v 0 300 200 100 400 800 700 600 500 900 1000 0 12345678910 v ds= 10v 0 300 200 100 400 800 700 600 500 900 1000 c oss c iss c rss 010 20 304050 60 70 80 0 120 80 40 160 200 ZVN4206G ZVN4206G
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